Symmetry and strain induced effects in semiconductors

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symmetry and strain induced effects in semiconductors

Gennadii Levikovich Bir (Author of Symmetry And Strain Induced Effects In Semiconductors)

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Physics of Semiconductors & Nanostructures Lecture 17: Heterostructures & Schottky (Cornell 2017)

Symmetry and strain-induced effects in semiconductors by Gennadiĭ Levikovich Bir, , Wiley edition, in English.
Gennadii Levikovich Bir

Symmetry and Strain-induced Effects in Semiconductors

Condensed Systems of Low Dimensionality pp Cite as. Coherent strain produced in lattice mismatched epitaxy can be exploited to alter the band structure of semiconductor heterostructures to a significant extent. The dominant effect of strain is to lift certain degeneracies in the Brillouin zone, alter the density of states at band edges and the band gaps. These effects can have significant effects on transport and optical properties of devices. This will be illustrated by examining the role of strain in electrical properties of SiGe strained alloys and on the performance of strained quantum well lasers. Unable to display preview.

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. The effect of strain on the electronic, optical and vibrational properties of semiconductors is currently used for engineering advanced electronic and photonic devices. From nanometre-scale electronics with III—V compound semiconductors 1 and strain scaling for CMOS to transforming silicon and germanium into suitable materials for photonic applications 2 , 3 , strain engineering has become a critical component in the design and manufacturing processes required to enable these advances.

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Gregory Evgenievich Ezekielevich Pikus May 7, — April 12, was a prominent Soviet theoretical physicist whose contributions strongly influenced developing physics of semiconductors. Among his most fundamental contributions are development of the method of invariants in band theory of solids, the Bir-Aronov-Pikus mechanism of spin relaxation of electrons, prediction of the circular photogalvanic effect, and theory of weak localization in noncentrosymmetric structures. His three monographs [1] [2] [3] reflect the focus points of the theory of semiconductors during the second half of 20th century from transistors to band theory to properties to artificial nanostructures. Pikus was born in Moscow but afterwards the family moved to Minsk currently Belorussia where he graduated from high school. After the graduation, he became a student in the physical-engineering department of Leningrad currently St. Petersburg Polytechnic University in the fall of

4 COMMENTS

  1. Calígula T. says:

    Gennadii Levikovich Bir (Author of Symmetry And Strain Induced Effects In Semiconductors)

  2. Laurel F. says:

    Symmetry and Strain-induced Effects in Semiconductors. Front Cover. Gennadiĭ Levikovich Bir, Grigoriĭ Ezekielevich Pikus. Wiley, - Crystallography.

  3. Liam B. says:

    Please choose whether or not you want other users to be able to see on your profile that this library is a favorite of yours.

  4. Layducziti1963 says:

    Symmetry and Strain - Induced Effects in Semiconductors. Front Cover. Mifʻal tirgume ha-madaʻ ha-Yiśreʼeli. Wiley, - Crystals - pages. 0 Reviews.

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